Transistor Germanium Vs Silicon

The key difference between silicon and germanium is that germanium has d electrons but silicon does not have any d electrons. Germanium vs silicon transistors the ultimate comparison handwired original designs.

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Silicon transistors are superior to germanium in almost every way.

Transistor germanium vs silicon. Germanium vs silicon fuzz beforeafter wah history and more. Starting from the beginning in 1948 the original commercial transistors were made from germanium material unlike all the silicon transistors we see today. Its funny actually the exact limitations that caused germanium transistors to fall from favor in large scale electronics manufacturing are the same attributes that make them sound so great in guitar pedals.

Germanium is similar to silicon in that it falls on the same row of the periodic table and is a semiconducting material. At room temperature a silicon crystal has fewer free electrons than a germanium crystal. These transistors offer higher gain and distort slightly differently than a germanium transistor for a sharper sound.

A lot of people love and use both kinds and as of late many builders have unveiled fuzz pedals that make use of both varieties of transistors harnessing the best properties of each in one mighty fuzz box that can do it all. Silicon also works on higher frequencies giving you a sharper more trebly tone. Fortunately the germanium vs.

Transistors that use a combination of silicon and germanium in the channel can reportedly be found in some recent chips and they made an appearance in a 2015 demonstration of future chip. It is easily obtainable and remains stable at much higher temperatures it has a higher voltage threshold it is much more sensitive to high frequencies and it puts out more gain. Germanium will sound a tad different than silicon in a given circuit but its also worth pointing out that a great many excellent sounding pedals uses silicon components.

Silicon transistors are much cheaper to mass produce and each one is identical. This implies that silicon will have much smaller collector cut off current icbo than that of germanium. Furthermore the electrons configuration of silicon is 1s 2 2s 2 2p 6 3s 2 3p 2 and the electron configuration of germanium is 1s 2 2s 2 2p 6 3s 2 3p 6 4s 2 3d 10 4p 2.

Silicon problem need not be an eitheror proposition. In general with germanium icbo is 10 to 100 times greater than with silicon.

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